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Manipulation of spin filtering effect in a hybrid magnetic–electric-barrier nanostructure with a δ-doping

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Abstract

By means of a hybrid magnetic–electric barrier (MEB) on the top of the semiconductor InAs/AlxIn1−xAs heterostructure, a spin filter can be obtained. In this work, we introduce a δ-doping into this MEB device by molecular beam epitaxy or metal-organic chemical-vapor deposition, to manipulate the spin filtering. With the help of the improved transfer-matrix method and Landauer–Bűttiker theory, transmission coefficient, conductance and spin polarization are calculated for the electrons across this device. Due to spin-field interaction between electron spins and magnetic fields, an obvious spin filtering effect remains in the device even if a δ-doping is included inside. The behavior of spin-polarized electrons is related closely to the δ-doping, due to the strong dependence of the effective potential experienced by the electrons on such a doping. Degree of spin polarization can be manipulated by properly adjusting weight or position of the δ-doping, which gives rise to a structurally controllable spin filter.

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Acknowledgements

This work was supported jointly by the National Natural Science Foundation of China (61464004 and 11864009) and the Guangxi Natural Science Foundation of China (2016GXNSFAA380095).

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Authors and Affiliations

  1. College of Science, Guilin University of Technology, Guilin, 541004, People’s Republic of China

    Yong-Long Zhou, Mao-Wang Lu, Xue-Li Cao, Xin-Hong Huang, Meng-Rou Huang & Dong-Hui Liang

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  1. Yong-Long Zhou
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  2. Mao-Wang Lu
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  3. Xue-Li Cao
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  4. Xin-Hong Huang
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  5. Meng-Rou Huang
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Correspondence to Mao-Wang Lu.

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Zhou, YL., Lu, MW., Cao, XL. et al. Manipulation of spin filtering effect in a hybrid magnetic–electric-barrier nanostructure with a δ-doping. Appl. Phys. A 124, 705 (2018). https://doi.org/10.1007/s00339-018-2125-0

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