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A novel low-firing BiZn2VO6 microwave dielectric ceramic with low loss

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Abstract

novel low-firing microwave dielectric ceramic BiZn2VO6 was prepared using the solid state reaction method. The phase composition, sintering behavior, and microwave dielectric properties were investigated. BiZn2VO6 ceramic could be well densified at relatively low temperature 780 °C and exhibited promising microwave dielectric properties with a ε r  = 15.0, Q × f = 20,640 GHz, and τ f  = −88 ppm/°C. BiZn2VO6 ceramic has chemically compatibility with Ag electrodes when sintered at 780 °C for 4 h.

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Acknowledgments

This work was supported by Natural Science Foundation of China (Nos. 21261007, 21561008, and 51502047), the Natural Science Foundation of Guangxi Zhuang Autonomous Region (Grant No. 2015GXNSFBA139234 and 2015GXNSFFA139003), Project of Department of Science and Technology of Guangxi (No. 114122005-28), and Projects of Education Department of Guangxi Zhuang Autonomous Region (No. ZD2014160, KY2015YB341, and KY2015YB122).

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Authors and Affiliations

  1. State Key Laboratory Breeding Base of Nonferrous Metals and Specific Materials Processing, Guangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices, College of Material Science and Engineering, Guilin University of Technology, Guilin, 541004, China

    Hao Luo, Jie Li, Jungu Xu, Liang Fang, Ying Tang & Chunchun Li

  2. College of Information Science and Engineering, Guilin University of Technology, Guilin, 541004, China

    Chunchun Li

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  1. Hao Luo
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  2. Jie Li
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  3. Jungu Xu
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  4. Liang Fang
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  5. Ying Tang
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  6. Chunchun Li
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Correspondence to Liang Fang or Chunchun Li.

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Luo, H., Li, J., Xu, J. et al. A novel low-firing BiZn2VO6 microwave dielectric ceramic with low loss. J Mater Sci: Mater Electron 27, 210–214 (2016). https://doi.org/10.1007/s10854-015-3739-z

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