Abstract
An analytic current–voltage (I–V) model for doped double-gate metal–oxide–semiconductor field-effect transistors (MOSFETs) is derived by using a rigorous perturbation method to solve one-dimensional (1D) Poisson's equation. More accurate prediction of the surface potential and I–V characteristics is achieved by introducing a higher-order correction and setting the operating point of Taylor expansion at the channel surface where the major population of mobile charge is located. Both technology computer-aided design (TCAD) simulations and the numerical solution to 1D Poisson's equation verify the improved accuracy of our model compared with Berkeley short-channel insulated-gate FET model (BSIM) model, especially when the gate voltage and doping level are higher. We also discuss and compare the numerical errors caused by the approximations made in BSIM and our models.